q?v~zy??q?v?_rc]{??qcabfq HRD13N10K_hru13n10k bv dss = 100 v r ds(on) typ =85 p
i d =3.5 a features absolute maximum ratings t c =25 e unless otherwise specified HRD13N10K / hru13n10k 100v n-channel trench mosfet symbol parameter value units v dss drain-source voltage 100 v i d drain current ? continuous (t c = 25 e ) 3.5 a drain current ? continuous (t c = 70 e ) 2.8 a i dm drain current ? pulsed (note 1) 14.0 a v gs gate-source voltage 16 v e as single pulsed avalanche energy (note 2) 40 mj i ar avalanche current (note 1) 3.5 a p d power dissipation (t a = 25 e )* 2.5 w power dissipation (t c = 25 e ) - derate above 25 e 37 w 0.3 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e 1.gate 2. drain 3. source thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 3.4 e /w r ja junction-to-ambient* -- 50 r ja junction-to-ambient -- 110 jan 2015 2 1 2 3 1 3 d-pak i-pak HRD13N10K hru13n10k * when mounted on the minimum pad size recommended (pcb mount) ? originative new design ? superior avalanche rugged technology ? excellent switching characteristics ? unrivalled gate charge : 20 nc (typ.) ? extended safe operating area ? lower r ds(on) : 85 p
(typ.) @v gs =10v ? lower r ds(on) : 135 p
(typ.) @v gs =4.5v ? built-in esd diode ? 100% avalanche tested
q?v~zy??q?v?_rc]{??qcabfq HRD13N10K_hru13n10k electrical characteristics t j =25 q c unless otherwise specified symbol parameter test conditions min typ max units i s continuous source-drain diode forward current -- -- 3.5 a i sm pulsed source-drain diode forward current -- -- 14.0 v sd source-drain diode forward voltage i s = 3.5 a, v gs = 0 v -- -- 1.1 v trr reverse recovery time i s = 3.5 a, v gs = 0 v di f /dt = 100 a/ v (note 4) -- 44 -- qrr reverse recovery charge -- 80 -- nc on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 100 -- -- v i dss zero gate voltage drain current v ds = 80 v, v gs = 0 v -- -- 1 3 v ds = 80 v, t j = 125 e -- -- 100 3 i gss gate-body leakage current v gs = 16 v, v ds = 0 v -- -- 10 3 off characteristics c iss input capacitance v ds = 30 v, v gs = 0 v, f = 1.0 mhz -- 940 1220 ? c oss output capacitance -- 80 105 ? c rss reverse transfer capacitance -- 50 65 ? dynamic characteristics t d(on) turn-on time v ds = 50 v, i d = 3.5 a, r g = 25 ? (note 4,5) -- 17 44 t r turn-on rise time -- 24 58 t d(off) turn-off delay time -- 85 180 t f turn-off fall time -- 12 34 q g total gate charge v ds = 80 v, i d = 3.5 a, v gs = 10 v (note 4,5) -- 20 26 nc q gs gate-source charge -- 3.0 -- nc q gd gate-drain charge -- 4.2 -- nc switching characteristics source-drain diode maximum ratings and characteristics notes ; 1. repetitive rating : pulse width limi ted by maximum junction temperature 2. l=1mh, i sd ? $ 9 dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ di/dt ? $ v , v dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & \ f o h ? 5. essentially independent of operating temperature v gs gate threshold voltage v ds = v gs , i d = 250 3 1.2 -- 2.8 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3.5 a -- 85 105 m ? v gs = 4.5 v, i d = 2.0 a -- 135 175 m ?
q?v~zy??q?v?_rc]{??qcabfq HRD13N10K_hru13n10k typical characteristics figure 1. on region characteristics figure 2. gate-source on resistance figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 036912151821 0 2 4 6 8 10 12 v gs , gate-source voltage [v] q g , total gate charge [nc] * note : i d = 3.5a v ds = 80v v ds = 50v
q?v~zy??q?v?_rc]{??qcabfq HRD13N10K_hru13n10k typical characteristics (continued) figure 7. gate threshold voltage vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 100 us 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 * notes : 1. z t jc (t) = 3.4 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec]
q?v~zy??q?v?_rc]{??qcabfq HRD13N10K_hru13n10k fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_rc]{??qcabfq HRD13N10K_hru13n10k fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_rc]{??qcabfq HRD13N10K_hru13n10k package dimension { v t y \ y g o h ? ? ? ? g n ? z t p g
q?v~zy??q?v?_rc]{??qcabfq HRD13N10K_hru13n10k package dimension { v t y \ x g o h ? ? ? ? g n ? z t p g
q?v~zy??q?v?_rc]{??qcabfq HRD13N10K_hru13n10k package dimension { v t y \ x g o h ? ? ? ? g j s k p g
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